Halbleiterbauelement mit Zulassung der Führung einer Unmittelbar unter einem Metallkissen Geformten Metallschicht

Details

Veröffentlichungs-Nr.

EP3131118

Aktenzeichen

EP16173492

Anmeldetag

8. Juni 2016

Veröffentlichung

17. April 2019

Erteilung

17. April 2019

Rechtsraum

EP

IPC

H01L23/528H01L23/522H01L23/532

Abstract

A semiconductor device (400) may include a metal pad (402) and a first specific metal layer routing (404) . The metal pad (402) is positioned in a first metal layer (406) of the semiconductor device (400) and is directly contacting the first metal layer (406). The first specific metal layer routing (404) is formed in a second metal layer (408) of the semiconductor device (400) and under the metal pad (402). In addition, the semiconductor device (400) may include at least one via plug (401) for connecting the first specific metal layer routing (404) to at least one metal region in the first metal layer (406), where the aforementioned at least one via plug (401) is formed directly under the metal pad (402).

Anmelder

Firma

MediaTek Inc.

Land

🇹🇼 Taiwan

Fachgebiete