Verfahren zum Verspannen einer Halbleiterschicht

Details

Veröffentlichungs-Nr.

EP3142152

Aktenzeichen

EP16188202

Anmeldetag

9. September 2016

Veröffentlichung

20. Februar 2019

Erteilung

20. Februar 2019

Rechtsraum

EP

IPC

H01L29/66H01L21/02H01L21/265H01L21/266H01L29/10H01L21/84H01L21/8234H01L29/786H01L29/165H01L29/78

Abstract

Method for producing a layer of semiconductor material comprising the steps of: a) forming a stack comprising a first layer (3) based on a first semiconductor material coated with a second layer (6) based on a second semiconductor material with a lattice parameter different from that of the first semiconductor material, b) producing on the second semiconductor layer a mask (10) having a symmetry, c) rendering the first semiconductor layer (3) amorphous as well as zones (6') of the second semiconductor layer (6) without rendering amorphous one or more regions (6a, 6b, 6c) of the second semiconductor layer protected by the mask and arranged respectively opposite the masking block(s), d) performing a recrystallization of the regions rendered amorphous (6a, 6b, 6c) and of the first semiconductor layer, from which it results that this first semiconductor layer is strained.

Anmelder

Firmen

Commissariat à l'énergie atomique et aux énergies alternatives
STMicroelectronics (Crolles 2) SAS

Land

🇫🇷 Frankreich

Fachgebiete