Verbindungsdraht für Halbleiterbauelement

Details

Veröffentlichungs-Nr.

EP3147938

Aktenzeichen

EP15882901

Anmeldetag

28. Dezember 2015

Veröffentlichung

12. Juni 2024

Erteilung

12. Juni 2024

Rechtsraum

EP

IPC

C22C5/04H01L23/00C22C9/00C22C9/06C25D5/10C25D5/50// C25D7/06C25D3/50C22F1/08

Abstract

There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at% at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at% to 75 at%.

Anmelder

Firmen

Nippon Micrometal Corporation
NIPPON STEEL Chemical & Material Co., Ltd.
Nippon Steel & Sumikin Materials Co., Ltd.

Land

🇯🇵 Japan

Fachgebiete