Halbleiterbauelement und Verfahren zur Herstellung davon

Details

Veröffentlichungs-Nr.

EP3147950

Aktenzeichen

EP16190153

Anmeldetag

22. September 2016

Veröffentlichung

24. März 2021

Erteilung

24. März 2021

Rechtsraum

EP

IPC

H01L29/40H01L29/06H01L29/739H01L21/331

Abstract

A performance of a semiconductor device is improved. A semiconductor device includes two element portions and an interposition portion interposed between the two element portions. The interposition portion includes a p-type body region formed in a part of a semiconductor layer, the part being located between two trenches, and two p-type floating regions formed in two respective parts of the semiconductor layer, the two respective portions being located on both sides of the p-type body region via the two respective trenches. A lower end of the p-type floating region is arranged on a lower side with reference to a lower end of the p-type body region.

Anmelder

Firma

Renesas Electronics Corporation

Land

🇯🇵 Japan

Fachgebiete