Verfahren zur Glättung der Oberfläche einer Struktur

Details

Veröffentlichungs-Nr.

EP3193355

Aktenzeichen

EP17150008

Anmeldetag

2. Januar 2017

Veröffentlichung

13. November 2019

Erteilung

13. November 2019

Rechtsraum

EP

IPC

H01L21/324// H01L21/762

Abstract

The invention relates to a process for smoothing a silicon-on-insulator structure comprising the exposure of a surface of the structure to an inert or reducing gas flow and to a high temperature during a heat treatment, the process comprising: • a first heat treatment step at a first temperature and under a first gas flow defined by a first flow rate; the process being noteworthy in that it comprises: • a second heat treatment step at a second temperature lower than the first temperature and under a second gas flow defined by a second flow rate lower than the first flow rate.

Anmelder

Firma

Soitec

Land

🇫🇷 Frankreich

Fachgebiete