Zum Hochspannungsbetrieb Fähiges Halbleiterbauelement
Anmelder: MediaTek Inc. 🇹🇼
Details
- Veröffentlichungs-Nr.
- EP3217431
- Aktenzeichen
- EP17157038
- Anmeldetag
- 21. Februar 2017
- Veröffentlichung
- 20. April 2022
- Erteilung
- 20. April 2022
- Rechtsraum
- EP
- IPC
- H01L29/40H01L29/78H01L21/336
Abstract
A semiconductor device capable of high-voltage operation includes a semiconductor substrate having a first conductivity type. A first well doped region is formed in a portion of the semiconductor substrate. The first well doped region has a second conductivity type. A first doped region is formed on the first well doped region, having the second conductivity type. A second doped region is formed on the first well doped region and is separated from the first doped region, having the second conductivity type. A first gate structure is formed over the first well doped region and is adjacent to the first doped region. A second gate structure is formed beside the first gate structure and is close to the second doped region. A third gate structure is formed overlapping a portion of the first gate structure and a first portion of the second gate structure.
Anmelder
- Firma
- MediaTek Inc.
- Land
- 🇹🇼 Taiwan
Taiwanisches Unternehmen, das Halbleiter und Chipsätze für Smartphones, Fernseher, WLAN-Geräte und andere elektronische Produkte entwickelt und vertreibt.
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Fachgebiete
Boehmert & Boehmert geht auf die Zulassung von Dr. Karl Boehmert 1931 in Berlin zurück. Mit Standorten in Deutschland, Alicante, Paris und Shanghai bietet die Kanzlei IP aus einer Hand und legt besonderen Wert auf persönliche Mandantenbetreuung statt Anonymität.