Verfahren zur Herstellung eines Sic-Einkristalls

Details

Veröffentlichungs-Nr.

EP3243936

Aktenzeichen

EP17170472

Anmeldetag

10. Mai 2017

Veröffentlichung

19. September 2018

Erteilung

19. September 2018

Rechtsraum

EP

IPC

C30B9/06C30B19/04C30B29/36C30B9/10C30B19/06

Abstract

A low-resistance p-type SiC single crystal containing no inclusions is provided. A method for producing a SiC single crystal in which a SiC seed crystal substrate is contacted with a Si-C solution having a temperature gradient such that a temperature of the Si-C solution decreases from an interior of the Si-C solution toward a surface of the Si-C solution, to grow the SiC single crystal, wherein the Si-C solution comprises Si, Cr, A1 and B, and wherein the A1 is comprised in the Si-C solution in an amount of 10 at% or greater, based on the total of the Si, Cr, A1 and B, and the B is comprised in the Si-C solution in an amount of greater than 0.00 at% and no greater than 1.00 at%, based on the total of the Si, Cr, A1 and B.

Anmelder

Firma

Toyota Jidosha Kabushiki Kaisha

Land

🇯🇵 Japan

Fachgebiete