Halbleiterstruktur

Details

Veröffentlichungs-Nr.

EP3246951

Aktenzeichen

EP17169363

Anmeldetag

4. Mai 2017

Veröffentlichung

7. Juli 2021

Erteilung

7. Juli 2021

Rechtsraum

EP

IPC

H01L29/06H01L27/02H01L29/78

Abstract

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate, a well region on the semiconductor substrate, a radio frequency circuit, a first guard ring adjacent to the RF circuit, and a first isolation region directly disposed between the RF circuit and the first guard ring. The well region has a first conductive type. The RF circuit includes a FIN field-effect transistor having a plurality of first fins and a plurality of first polys on the well region, wherein the first polys are perpendicular to the first fins. The first guard ring includes a plurality of second fins and a pair of second polys on the well region, wherein the second polys are perpendicular to the second fins. The first fins are arranged parallel to the second fins, and the first fins are separated from the second fins by the first isolation region.

Anmelder

Firma

MediaTek Inc.

Land

🇹🇼 Taiwan

Fachgebiete