Halbleiterschaltvorrichtung
Anmelder: NXP B.V. 🇳🇱
Details
- Veröffentlichungs-Nr.
- EP3261120
- Aktenzeichen
- EP16290115
- Anmeldetag
- 24. Juni 2016
- Veröffentlichung
- 1. Mai 2019
- Erteilung
- 1. Mai 2019
- Rechtsraum
- EP
- IPC
- H01L27/02H01L29/06H01L29/417
Abstract
A semiconductor switch device and a method of making the same. The semiconductor switch device includes a field effect transistor located on a semiconductor substrate. The field effect transistor includes a plurality of gates. Each gate includes a gate electrode and gate dielectric arranged in a loop on a major surface of the substrate. The loops formed by the gates are arranged concentrically. Each gate has a source region located adjacent an inner edge or outer edge of the loop formed by that gate and a drain region located adjacent the other edge of said inner edge and said outer edge of the loop formed by that gate.
Anmelder
- Firma
- NXP B.V.
- Land
- 🇳🇱 Niederlande
Niederländischer Halbleiterhersteller mit Sitz in Eindhoven. Entwickelt Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation, Sicherheit sowie industrielle Anwendungen.
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