Doppelt Verkapseltes Leistungshalbleitermodul und Verfahren zur Herstellung davon

Details

Veröffentlichungs-Nr.

EP3276660

Aktenzeichen

EP16181357

Anmeldetag

27. Juli 2016

Veröffentlichung

28. Oktober 2020

Erteilung

28. Oktober 2020

Rechtsraum

EP

IPC

H01L25/07H01L23/00H01L23/24H01L23/32// H01L23/053

Abstract

One aspect relates to a power semiconductor module. The module includes a module housing (6), a substrate, and a semiconductor chip (1) that is attached to the substrate (2). The semiconductor chip (1) is disposed in the module housing (6). A dielectric first encapsulation (51) is disposed in the module housing (6), in physical contact with both the semiconductor chip (1) and the substrate (2) and has a first modulus of elasticity. A dielectric second encapsulation (52) is disposed in the module housing (6) and has a second modulus of elasticity. The first encapsulation (51) is a polymer and disposed between the substrate (2) and the second encapsulation (52). The semiconductor chip (1) is disposed between the first encapsulation (51) and the substrate (2). Further, the first modulus of elasticity is greater than the second modulus of elasticity.

Anmelder

Firma

Infineon Technologies AG

Land

🇩🇪 Deutschland

Fachgebiete