Dünnschichttransistor, Verfahren zur Herstellung davon und Anzeigevorrichtung damit

Details

Veröffentlichungs-Nr.

EP3276664

Aktenzeichen

EP17183282

Anmeldetag

26. Juli 2017

Veröffentlichung

11. November 2020

Erteilung

11. November 2020

Rechtsraum

EP

IPC

H01L27/12H01L29/786H01L29/66

Abstract

Disclosed is a thin film transistor (10) including both an N-type semiconductor layer (131) and a P-type semiconductor layer (132), a method for manufacturing the same, and a display device (1000) including the same, wherein the thin film transistor (10) may include a first gate electrode (110) on a substrate (100); a first gate insulating film (120) for covering the first gate electrode (110); a semiconductor layer (130) on the first gate insulating film (129); a second gate insulating film (150) covering the semiconductor layer (130); and a second gate electrode (160) on the second gate insulating film (150), wherein the semiconductor layer (130) includes the N-type semiconductor layer (131) and the P-type semiconductor layer (132).

Anmelder

Firma

LG Display Co., Ltd.

Land

🇰🇷 Südkorea

Fachgebiete