Halbleiterbauelement und Halbleiterbauelementpaket damit

Details

Veröffentlichungs-Nr.

EP3291314

Aktenzeichen

EP17188926

Anmeldetag

1. September 2017

Veröffentlichung

31. August 2022

Erteilung

31. August 2022

Rechtsraum

EP

IPC

H01L33/14H01L33/32// H01L33/04

Abstract

Disclosed are a semiconductor device including a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a semiconductor device package including the semiconductor device. The active layer includes a plurality of barrier layers and a plurality of well layers. The second conductive semiconductor layer includes a 2-2 conductive semiconductor layer and a 2-1 conductive semiconductor layer disposed on the 2-2 conductive semiconductor layer. The barrier layers, the well layers, the 2-2 conductive semiconductor layer, and the 2-1 conductive semiconductor layer include AlGaN. The 2-2 conductive semiconductor layer has a higher aluminum composition than the well layers, and the 2-1 conductive semiconductor layer has a lower aluminum composition than the well layers. The aluminum composition of the 2-1 conductive semiconductor layer decreases with a first slope as the 2-1 conductive semiconductor layer is further away from the active layer, and the aluminum composition of the 2-2 conductive semiconductor layer decreases with a second slope as the 2-2 conductive semiconductor layer is further away from the active layer, wherein the first slope is greater than the second slope.

Anmelder

Firmen

Suzhou Lekin Semiconductor Co., Ltd.
LG Innotek Co., Ltd.

Land

🇨🇳 China

Fachgebiete