Fotodetektionsvorrichtung und Fotodetektionssystem

Details

Veröffentlichungs-Nr.

EP3309847

Aktenzeichen

EP17193644

Anmeldetag

28. September 2017

Veröffentlichung

5. Juni 2024

Erteilung

5. Juni 2024

Rechtsraum

EP

IPC

H01L31/107

Abstract

An photodetection apparatus comprising an avalanche diode wherein, in plane view, a first semiconductor region (71) of a first conductivity type overlaps at least a portion of a third semiconductor region /74), a second semiconductor region (76) overlaps at least a portion of a fourth semiconductor region (72) of a second conductivity type, a height of a potential of the third semiconductor region (74) with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region (72), and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.

Anmelder

Firma

Canon Kabushiki Kaisha

Land

🇯🇵 Japan

Fachgebiete