Verfahren zur Herstellung eines Halbleiterelements mit Hochwiderstandsfähigem Substrat

Details

Veröffentlichungs-Nr.

EP3319113

Aktenzeichen

EP17198392

Anmeldetag

25. Oktober 2017

Veröffentlichung

31. Juli 2019

Erteilung

31. Juli 2019

Rechtsraum

EP

IPC

H01L21/322H01L21/268H01L21/324// H01L21/762

Abstract

The invention concerns a method of fabrication of a semiconductor element, the method involving a step of rapid heat treatment exposing a substrate comprising a base having a resistivity greater than 1000 Ohm.cm to a peak temperature able to deteriorate the resistivity of the base. According to the invention, the step of rapid heat treatment is followed by a curing heat treatment exposing the substrate to a curing temperature between 800°C and 1250°C and having a cooldown rate less than 5°C/sec when the curing temperature is between 1250°C and 1150°C, less than 20°/sec when the curing temperature is between 1150°C and 1100°C, and less than 50°C/sec when the curing temperature is between 1100°C and 800°C.

Anmelder

Firma

Soitec

Land

🇫🇷 Frankreich

Fachgebiete