Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines Optoelektronischen Halbleiterbauelements

Details

Veröffentlichungs-Nr.

EP3352228

Aktenzeichen

EP17152858

Anmeldetag

24. Januar 2017

Veröffentlichung

25. September 2019

Erteilung

25. September 2019

Rechtsraum

EP

IPC

H01L33/08H01L33/18H01L33/42H01L33/40H01L33/14

Abstract

An optoelectronic semiconductor component (20) described herein comprises a multiplicity of active regions (10), wherein the active regions (10) are arranged spaced apart from each other, have a core region (11), an active layer (12) covering the core region (11) and have a cover layer (13) which covers the active layer (12). Each active region (10) has a current spreading layer (4) at least partly covering sidewalls (15) of the respective active region (10), wherein each of the current spreading layers (4) comprises a transparent conductive oxide and is in electrical contact with the cover layer (13). A metal layer (6) directly adjoins part of the active regions (10) and part of the current spreading layers (4), wherein the metal layer (6) electrically interconnects the current spreading layers (4) of the active regions (10). Further, a method for producing the optoelectronic semiconductor component (20) is described.

Anmelder

Firma

OSRAM Opto Semiconductors GmbH

Land

🇩🇪 Deutschland

Fachgebiete