Verfahren zur Herstellung einer Halbleiterschaltvorrichtung

Details

Veröffentlichungs-Nr.

EP3404722

Aktenzeichen

EP17171514

Anmeldetag

17. Mai 2017

Veröffentlichung

24. März 2021

Erteilung

24. März 2021

Rechtsraum

EP

IPC

H01L29/66H01L21/266H01L29/78H01L29/08H01L29/10

Abstract

A semiconductor switch device and a method of making the same. The method includes providing a semiconductor substrate having a major surface and a first semiconductor region having a first conductivity type. The method further includes implanting ions into the first semiconductor region through an opening in a mask positioned over the first semiconductor region, thereby to form a well region located in the first semiconductor region, the well region having a second conductivity type different to the first conductivity type. The method also includes depositing and patterning a gate electrode material on a gate dielectric to form a gate electrode located directly above the well region. The method further includes performing ion implantation to form a source region located in the well region on a first side of the gate, and to form a drain region located outside the well region on a second side of the gate.

Anmelder

Firma

NXP B.V.

Land

🇳🇱 Niederlande

Fachgebiete