Halbleiterschaltvorrichtung und Verfahren

Details

Veröffentlichungs-Nr.

EP3428971

Aktenzeichen

EP17180985

Anmeldetag

12. Juli 2017

Veröffentlichung

9. September 2020

Erteilung

9. September 2020

Rechtsraum

EP

IPC

H01L29/417H01L29/78H01L29/06H01L29/08

Abstract

A semiconductor switch device and a method of making the same. The device includes a semiconductor substrate having a major surface. The device also includes a first semiconductor region located in the substrate beneath the major surface. The device includes an elongate gate located on the major surface. The device also includes a source region and a drain region located in the first semiconductor region adjacent respective first and second elongate edges of the gate. The device also includes electrical contacts for the source and drain regions. The contacts include at least two contacts located on either the source region or the drain region, which are spaced apart along a direction substantially parallel the elongate edges of the gate. The device further includes an isolation region located between the at least two contacts. The isolation region extends through the source/drain region from the major surface to the first semiconductor region.

Anmelder

Firma

NXP B.V.

Land

🇳🇱 Niederlande

Fachgebiete