Leistungsverstärkerzelle
Anmelder: NXP B.V. 🇳🇱
Details
- Veröffentlichungs-Nr.
- EP3477859
- Aktenzeichen
- EP17199444
- Anmeldetag
- 31. Oktober 2017
- Veröffentlichung
- 30. September 2020
- Erteilung
- 30. September 2020
- Rechtsraum
- EP
- IPC
- H03H7/42H03F1/02H03F1/56H03F3/24H03F3/45H03F3/193
Abstract
A power amplifier cell comprising a first power amplifier (102), a second power amplifier (104) and a balun. The balun comprises a first inductor (118) and a second inductor (122) that define a first transformer; and a third inductor (120) and a fourth inductor (124) that define a second transformer. The following: (i) a parasitic capacitance (106) of the first power amplifier; (ii) a leakage inductance (110) of the first transformer; and (iii) a capacitive coupling (114) between the first inductor and the second inductor, contribute to a first impedance matching circuit for the first power amplifier. Also, the following (iv) a parasitic capacitance (108) of the second power amplifier; (v) a leakage inductance (112) of the second transformer; and (vi) a capacitive coupling (116) between the third inductor and the fourth inductor, contribute to a second impedance matching circuit for the second power amplifier.
Anmelder
- Firma
- NXP B.V.
- Land
- 🇳🇱 Niederlande
Niederländischer Halbleiterhersteller mit Sitz in Eindhoven. Entwickelt Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation, Sicherheit sowie industrielle Anwendungen.
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