Halbleitermodul und Verfahren zu dessen Herstellung

Details

Veröffentlichungs-Nr.

EP3499560

Aktenzeichen

EP17207680

Anmeldetag

15. Dezember 2017

Veröffentlichung

18. August 2021

Erteilung

18. August 2021

Rechtsraum

EP

IPC

H01L23/24H01L25/07H01L21/56H01L23/31H01L23/36H01L23/373H01L23/498H01L23/495

Abstract

A power semiconductor module arrangement comprising two or more individual semiconductor devices (21), each semiconductor device (21) comprising a lead frame (41), a semiconductor body (20) that is arranged on the lead frame (41), and a molding material (81) enclosing the semiconductor body (20) and at least part of the lead frame (41). The power semiconductor module arrangement further comprises a frame (52) surrounding the two or more semiconductor devices (21), and a casting compound (8) at least partly filling a capacity within the frame (52), thereby at least partly enclosing the two or more individual semiconductor devices (21).

Anmelder

Firma

Infineon Technologies AG

Land

🇩🇪 Deutschland

Fachgebiete