Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements

Details

Veröffentlichungs-Nr.

EP3537477

Aktenzeichen

EP19155607

Anmeldetag

5. Februar 2019

Veröffentlichung

22. Juli 2020

Rechtsraum

EP

IPC

H01L27/11568H01L29/423H01L27/11565H01L21/28

Abstract

Disclosed is a semiconductor device including: a semiconductor substrate having a first surface; a first conductive film (CF1) that is located over the first surface and is formed to circle in plan view; a second conductive film (CF2) that is located over the first surface and surrounds the outer periphery of the first conductive film in plan view; a first insulating spacer (ISS1) located between the first conductive film and the second conductive film; a first gate insulating film (GIF1), comprising a charge accumulation layer, that is located between the first surface and the first conductive film and the accumulated amount of charges of which changes due to a change in the voltage between the first conductive film and the semiconductor substrate; and a second gate insulating film (GIF2) located between the first surface and the second conductive film.

Anmelder

Firma

Renesas Electronics Corporation

Land

🇯🇵 Japan

Fachgebiete