Anordnungen und Verfahren zur Bereitstellung einer Drahtbondverbindung
Anmelder: Infineon Technologies AG 🇩🇪
Details
- Veröffentlichungs-Nr.
- EP3550596
- Aktenzeichen
- EP18165648
- Anmeldetag
- 4. April 2018
- Veröffentlichung
- 4. September 2024
- Erteilung
- 4. September 2024
- Rechtsraum
- EP
- IPC
- H01L21/60B23K20/00H01L23/00
Abstract
A method comprises heating a first electrically conductive layer (14) that is to be electrically contacted, and that is arranged on a first element (10), and pressing a first end (22) of a bonding wire (20) on the first electrically conductive layer (14) by exerting pressure to the first end (22) of the bonding wire (20), and further by exposing the first end (22) of the bonding wire (20) to ultrasonic energy, thereby deforming the first end (22) of the bonding wire (20) and creating a permanent substance-to-substance bond between the first end (22) of the bonding wire (20) and the first electrically conductive layer (14). The bonding wire (20) either comprises a rounded cross section with a diameter (d1) of at least 125µm or a rectangular cross section with a first width (w1) of at least 500µm and a first height (h1) of at least 50µm.
Anmelder
- Firma
- Infineon Technologies AG
- Land
- 🇩🇪 Deutschland
Deutscher Halbleiterkonzern mit Sitz in Neubiberg bei München, hervorgegangen aus Siemens. Entwickelt und fertigt Halbleiter und Systemlösungen für Automobil-, Industrie- und Sicherheitsanwendungen.
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Westphal, Mussgnug & Partner Patentanwälte mbB
Westphal, Mussgnug & Partner Patentanwälte mbB · Villingen-Schwenningen