Verfahren zur Herstellung eines Substratdurchgangs und Halbleiterbauelement mit Solch einem Substratdurchgang

Details

Veröffentlichungs-Nr.

EP3550600

Aktenzeichen

EP18165692

Anmeldetag

4. April 2018

Veröffentlichung

5. August 2020

Erteilung

5. August 2020

Rechtsraum

EP

IPC

H01L21/768H01L23/48

Abstract

A substrate (1) is provided with a dielectric (2), a metal layer (3) embedded in the dielectric, and a metallic layer (4) arranged on the metal layer between the substrate and the metal layer. A via hole (9) is formed in the substrate and in a region of the dielectric that is between the substrate and the metal layer. An insulation layer (11) is applied in the via hole and removed from above a contact area (10) of the metal layer, and the metallic layer is completely removed from the contact area (10). A metallization (12) is applied in the via hole on the contact area.

Anmelder

Firma

ams AG

Land

🇦🇹 Österreich

Fachgebiete