Halbleiterbauelementstruktur und Verfahren zur Formung davon

Details

Veröffentlichungs-Nr.

EP3567634

Aktenzeichen

EP19171834

Anmeldetag

30. April 2019

Veröffentlichung

2. Juli 2025

Erteilung

2. Juli 2025

Rechtsraum

EP

IPC

H10D62/13H10D64/23H10D84/83H10D30/01H10D30/43H10D62/10// B82Y10/00

Abstract

A field effect transistor includes a nanosheet stack (108) and a gate structure (120), a power rail (132), first epitaxial structures (118) in the source/drain region (on the left hand side) and second epitaxial structures (118) in a boundary region of the device (on the right hand side) underneath te power rail (132). The first epitaxial structures (118 on the left hand side) are surrounded by first contact structures (122). The power rail (132) is spaced apart laterally from the gate structure and the first epitaxial structures (118), and extends in a direction perpendicular to a line connecting the source and the drain. The second epitaxial structures (118 on the right hand side) are also surrounded by a second contact structure (122), which is separated from the first contact structure by an inter layer dielectric (119). The second epitaxial structures (118) and the second contact structure (122), disposed directly beneath the power rail (132), are electrically connected to the power rail. A metal layer (126) and a via (130) electrically connect the first contact layer (122 on the left) with the second contact layer (122 on the right) and the power rail (132).

Anmelder

Firmen

MEDIATEK INC.
MediaTek Inc.

Land

🇹🇼 Taiwan

Fachgebiete