Verfahren zur In-Situ-Oberflächenrepassivierung in Rückkontaktierten Solarzellen

Details

Veröffentlichungs-Nr.

EP3576163

Aktenzeichen

EP18175113

Anmeldetag

30. Mai 2018

Veröffentlichung

27. Januar 2021

Erteilung

27. Januar 2021

Rechtsraum

EP

IPC

H01L31/0747H01L31/18H01L31/20

Abstract

A method (200) is provided for creating an interdigitated pattern for a back-contacted solar cell, including deposition (S201) of a first passivation layer stack (320) including a-Si of a first doping type, patterning (S202) the first passivation layer stack by using a first dry etching process to create one or more regions including the a-Si of the first doping type and one or more exposed regions of the surface, cleaning (S203) the one or more exposed regions of the surface from contaminants remaining from the first dry etching process, and depositing (S204) a second passivation layer stack (390) including a-Si of a second doping type different from the first doping type to create the interdigitated pattern together with the patterned first passivation layer stack. The cleaning includes depositing a sacrificial layer (360) at least on the exposed regions of the surface, and removing the sacrificial layer by a second dry etching process, at a temperature not exceeding 250 °C.

Anmelder

Firma

IMEC vzw

Land

🇧🇪 Belgien

Fachgebiete