Verbindung und Zusammensetzung zur Formung einer Organischen Schicht

Details

Veröffentlichungs-Nr.

EP3584240

Aktenzeichen

EP19178431

Anmeldetag

5. Juni 2019

Veröffentlichung

3. August 2022

Erteilung

3. August 2022

Rechtsraum

EP

IPC

C07D221/06C07C13/567C07D311/80C07D335/10G03F7/00H01L21/00C07D495/04C07D491/04

Abstract

<div notation="docdba" type="abstract" xml:base="/api/emi/section/5de8493c-72bd-41b8-950a-3c6751baecf4/image" xml:lang="en"><p>The present invention provides a compound shown by the following general formula (1-1),wherein AR1 and AR2 each independently represent an aromatic ring or an aromatic ring that contains at least one nitrogen atom and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded with each other; AR3 represents a benzene ring, a naphthalene ring, a thiophene ring, a pyridine ring, or a diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; "p" is 1 or 2; "q" is 1 or 2; "r" is 0 or 1; "s" is 2 to 4; when s = 2, Z represents a single bond, a divalent atom, or a divalent organic group; and when s = 3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound is capable of curing to form an organic film even in an inert gas not only in air atmosphere without forming byproducts, and also forming an organic under layer film that has good dry etching durability in substrate processing, excels in heat resistance and possesses superior gap filling/planarizing characteristics of a pattern formed on a substrate.</p></div>

Anmelder

Firmen

Shin-Etsu Chemical Co., Ltd.
International Business Machines Corporation

Land

🇯🇵 Japan

Fachgebiete