Halbleiterbauelement mit Latch-Up-Immunität

Details

Veröffentlichungs-Nr.

EP3611765

Aktenzeichen

EP19188936

Anmeldetag

29. Juli 2019

Veröffentlichung

20. September 2023

Erteilung

20. September 2023

Rechtsraum

EP

IPC

H01L21/336H01L29/78H01L29/08H01L29/10

Abstract

A semiconductor device includes a body region (108) of a second conductivity type, a body contact region (110) of the second conductivity type formed in the body region (108) and having a higher average doping concentration than the body region (108), a source region (100) of a first conductivity type opposite the second conductivity type formed in the body region (108) adjacent the body contact region (110), a drift zone (102) of the first conductivity type spaced apart from the source region (100) by a section of the body region (108) which forms a channel region (114) of the semiconductor device, and a gate electrode (116) configured to control the channel region (114). The body contact region (110) extends under a majority of the source region (100) in a direction towards the channel region (114) and has a doping concentration of at least 1x10¹⁸cm^-3under the majority of the source region (100). Additional semiconductor device embodiments and methods of manufacture are described.

Anmelder

Firma

Infineon Technologies AG

Land

🇩🇪 Deutschland

Fachgebiete