Iii-V-Halbleiterbauelement und Verfahren zur Herstellung eines Iii-V-Halbleiterbauelements mit einer Randabschlussstruktur

Details

Veröffentlichungs-Nr.

EP3627559

Aktenzeichen

EP18195332

Anmeldetag

19. September 2018

Veröffentlichung

22. Juni 2022

Erteilung

22. Juni 2022

Rechtsraum

EP

IPC

H01L29/78H01L21/336H01L29/06H01L29/20

Abstract

According to an aspect of the present inventive concept there is provided a method for forming a III-V semiconductor device comprising:forming a III-V semiconductor layer stack comprising in a bottom-up direction: a drain contact layer, a drift layer, a channel layer, a body contact layer and a source contact layer, wherein the drain contact layer, the drift layer and the source contact layer have a first conductivity type and the channel layer and the body contact layer have a second conductivity type opposite the first conductivity type,forming a set of gate structures extending through the source contact layer, the body contact layer and the channel layer,forming a set of source contacts contacting the source contact layer, andforming an edge termination structure, wherein forming the edge termination structure comprises:forming a drain contact extending through the layer stack and contacting the drain contact layer, andforming an insulating region extending vertically through the layer stack, into the channel layer such that a thickness portion of the channel layer remains under a bottom of the insulating region, wherein the remaining thickness portion of the channel layer forms a reduced surface field, RESURF, layer.

Anmelder

Firmen

IMEC VZW
Universiteit Gent
IMEC vzw

Land

🇧🇪 Belgien

Fachgebiete