Halbleiterbauelement

Details

Veröffentlichungs-Nr.

EP3664150

Aktenzeichen

EP18210658

Anmeldetag

6. Dezember 2018

Veröffentlichung

2. Juli 2025

Erteilung

2. Juli 2025

Rechtsraum

EP

IPC

H10D62/10H10D84/82H10D30/60H10D30/83H10D30/67H10D86/00

Abstract

A method comprises forming a layer stack with a plurality of first layers (110) of a first doping type and a plurality of second layers (120) of a second doping type complementary to the first doping type on top of a carrier (200). Forming the layer stack comprises forming a plurality of epitaxial layers (140_n) on the carrier (200). Forming each of the plurality of epitaxial layers (140_n) comprises depositing a layer of semiconductor material, forming at least two first implantation regions of one of a first type or a second type at different vertical positions of the respective layer of semiconductor material, and forming at least one second implantation region of a type that is complementary to the type of the first implantation regions, wherein the first implantation regions and the second implantation regions are arranged alternatingly.

Anmelder

Firma

Infineon Technologies Austria AG

Land

🇦🇹 Österreich

Fachgebiete