Halbleiterlaserelement und Herstellungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP3683907

Aktenzeichen

EP20151869

Anmeldetag

15. Januar 2020

Veröffentlichung

25. Januar 2023

Erteilung

25. Januar 2023

Rechtsraum

EP

IPC

H01S5/22H01S5/32H01S5/343H01S5/20

Abstract

A semiconductor laser element (100) includes an n-side semiconductor layer (2), an active layer (3), and a p-side semiconductor layer (4). A least a portion of the p-side semiconductor layer (4) forms a ridge (4a) projecting upward. The p-side semiconductor layer (4) includes an undoped first part (41), an electron barrier layer (42) containing a p-type impurity and having a larger band gap energy than the first part (41), and a second part (43) having at least one p-type semiconductor layer. The lower end of the ridge (4a) is positioned at the first part (41).

Anmelder

Firma

Nichia Corporation

Land

🇯🇵 Japan

Fachgebiete