Schaltsteuerungsschaltung für einen Leistungsschalter mit Schutz vor Elektrostatischer Entladung (esd)
Anmelder: NXP USA, Inc. 🇺🇸
Details
- Veröffentlichungs-Nr.
- EP3683965
- Aktenzeichen
- EP20152220
- Anmeldetag
- 16. Januar 2020
- Veröffentlichung
- 10. November 2021
- Erteilung
- 10. November 2021
- Rechtsraum
- EP
- IPC
- H03K17/0814H03K17/081H01L27/02H02H9/04
Abstract
An integrated circuit includes a power switch coupled between a first voltage supply node and an internal voltage supply node and a switch control circuit coupled to a control electrode of the power switch. The switch control circuit includes a driver circuit coupled between a second voltage supply node and a third voltage supply node, a pass-gate having a first node coupled to an output of the driver circuit and a second node coupled to the control electrode of the power switch, a pull-up transistor having a first current electrode coupled to the first voltage supply node, a second current electrode coupled to the control electrode of the power switch, and a bias circuit having a bias output configured to provide a higher voltage between the first and second power supply nodes as a bias voltage to a body electrode of the pull-up transistor.
Anmelder
- Firma
- NXP USA, Inc.
- Land
- 🇺🇸 USA
US-amerikanische Gesellschaft des Halbleiterkonzerns NXP, die Chips und Halbleiterlösungen für Automobiltechnik, Kommunikation und Industrieelektronik entwickelt.
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