Halbleiterbauelement

Details

Veröffentlichungs-Nr.

EP3690954

Aktenzeichen

EP19155232

Anmeldetag

4. Februar 2019

Veröffentlichung

5. August 2020

Rechtsraum

EP

IPC

H10D30/66H10D8/00H10D62/10

Abstract

A semiconductor device comprises a semiconductor body (100) comprising a first surface (101) and a second surface (102) opposite to the first surface (101) in a vertical direction (y), a first semiconductor region (32, 701) of a first doping type that is electrically coupled to a first terminal (S, A), a second semiconductor region (111, 702) of a second doping type that is electrically coupled to a second terminal (D, K), and a third semiconductor region (35, 703) of the second doping type but less highly doped than the second semiconductor region (111, 702) that extends in an active region (220) of the semiconductor device from the first semiconductor region (32, 701) to the second semiconductor region (111, 702) in the vertical direction (y). A horizontal field-stop-region (39, 704) of the first doping type extends in an edge region (210) of the semiconductor device from the first semiconductor region (32, 701) into the semiconductor body (100) in the vertical direction (y) such that it directly adjoins the first semiconductor region (32, 701) in the vertical direction (y) and the second semiconductor region (111, 702) in a horizontal direction (x). A horizontal compensation region (80, 706) of the first doping type extends from the horizontal field-stop-region (39, 704) into the second semiconductor region (111, 702) in the horizontal direction (x), wherein the horizontal direction (x) is perpendicular to the vertical direction (y).

Anmelder

Firma

Infineon Technologies Austria AG

Land

🇦🇹 Österreich

Fachgebiete