Laterale Transistorvorrichtung

Details

Veröffentlichungs-Nr.

EP3696863

Aktenzeichen

EP19157393

Anmeldetag

15. Februar 2019

Veröffentlichung

13. Oktober 2021

Erteilung

13. Oktober 2021

Rechtsraum

EP

IPC

H01L29/808H01L29/06H01L29/10H01L21/337H01L29/36H01L29/08// H01L27/06H01L29/417

Abstract

A lateral transistor device (400; 800; 900; 1000) comprises a layer stack (410; 810; 910; 1010) with a plurality of first semiconductor layers (412; 812; 912; 1012) of a first doping type and a plurality of second semiconductor layers (414; 814; 914; 1014) of a second doping type complementary to the first doping type. The lateral transistor device (400; 800; 900; 1000) further comprises a source region (420; 820; 1020), a drain region (424; 824; 1024) spaced apart from the source region (420; 820; 1020) in a first lateral direction of the lateral transistor device, at least one gate region (428; 828; 1028) arranged between the source region (420; 820; 1020) and the drain region (424; 824; 1024), a buffer layer arrangement (430, 450; 830, 850; 930, 950; 1030, 1050), and a contact layer (440; 840; 940; 1040). The buffer layer arrangement (430, 450; 830, 850; 930, 950; 1030, 1050) is arranged between the contact layer (440; 840; 940; 1040) and at least parts of the layer stack (410; 810; 910; 1010), the source region (420; 820; 1020) and the drain region (424; 824; 1024) in a vertical direction of the lateral transistor device. The buffer layer arrangement (430, 450; 830, 850; 930, 950; 1030, 1050) comprises a first buffer layer (430; 830; 930; 1030) and a second buffer layer (450; 850; 950; 1050), the second buffer layer (450; 850; 950; 1050) being arranged between the first buffer layer (430; 830; 930; 1050) and the contact layer (440; 840; 940; 1040). The first buffer layer (430; 830; 930; 1030), the second buffer layer (450; 850; 950; 1050) and the contact layer (440; 840; 940; 1040) have a same doping type, and a doping concentration of the second buffer layer (450; 850; 950; 1050) is in a range between a doping concentration of the first buffer layer (430; 830; 930; 1030) and a doping concentration of the contact layer (440; 840; 940; 1040).

Anmelder

Firma

Infineon Technologies Austria AG

Land

🇦🇹 Österreich

Fachgebiete