Halbleiterbauelement mit Doppeltem Verwendungszweck für Sonnenenergie und Datenspeicherung

Details

Veröffentlichungs-Nr.

EP3699960

Aktenzeichen

EP20158731

Anmeldetag

21. Februar 2020

Veröffentlichung

2. November 2022

Erteilung

2. November 2022

Rechtsraum

EP

IPC

H01L27/142H01L31/06H01L29/788

Abstract

The present disclosure describes aspects of a dual-use semiconductor device for solar power and data storage. In some aspects, a dual-use semiconductor device is selectively configured to generate power by coupling regions having a same type of doping to form a PN junction by which power is generated in response to light. The generated power may be provided to a load coupled to contacts (e.g., front and backside contacts) of the dual-use semiconductor device. The dual-use semiconductor device is also selectively configurable for data storage by decoupling the regions of the same type of doping to provide respective data storage access terminals for accessing (e.g., writing or reading) a bit value that is stored as a level of charge by a floating-gate structure of the dual-use semiconductor device. By so doing, solar power arrays implemented with dual-use semiconductor devices may also provide data storage functionality.

Anmelder

Firma

Marvell Asia Pte, Ltd.

Land

🇸🇬 Singapur

Fachgebiete