Halbleitermodul und Verfahren zur Herstellung davon

Details

Veröffentlichungs-Nr.

EP3731267

Aktenzeichen

EP19171080

Anmeldetag

25. April 2019

Veröffentlichung

28. Oktober 2020

Rechtsraum

EP

IPC

H01L23/049H01L23/24// H01L23/373H01L23/498

Abstract

A method for producing a power semiconductor module arrangement (100) comprises mixing inorganic fillers (81) with a casting material (5), thereby preparing a mixture comprising a first concentration of inorganic fillers (81), wherein the inorganic fillers (81) have a density (ρ<f>) that is higher than the density(ρ<cc>) of the casting material (5). The method further comprises filling the mixture comprising the inorganic fillers (81) and the casting material (5) into a housing (7), wherein a semiconductor substrate (10) is arranged within the housing (7), and wherein at least one semiconductor body (20) is arranged on a top surface of the semiconductor substrate (10), performing a settling step during which the inorganic fillers (81) settle down onto the semiconductor substrate (10) and the at least one semiconductor body (20), thereby forming a first layer (800) comprising a portion of the casting material (5) and the inorganic fillers (81), and a second layer (801) comprising a remaining portion of the casting material (5) without inorganic fillers (81), and hardening the casting material (5).

Anmelder

Firma

Infineon Technologies AG

Land

🇩🇪 Deutschland

Fachgebiete