In-Situ-Gehäuseintegrierte Dünnschichtkondensatoren zur Leistungsabgabe

Details

Veröffentlichungs-Nr.

EP3734656

Aktenzeichen

EP20162885

Anmeldetag

13. März 2020

Veröffentlichung

4. November 2020

Rechtsraum

EP

IPC

H01L23/498H01L23/50H01L23/522H01L23/64H05K1/16

Abstract

Embodiments described herein are directed to a thin film capacitor (TFC) for power delivery that is in situ in a package substrate and techniques of fabricating the TFC. In one example, the TFC includes a first electrode, a dielectric layer over the first electrode, and a second electrode over the dielectric layer. Each of the dielectric layer and the second electrode comprises an opening. Furthermore, the two openings are positioned over one another such that the openings expose a surface of the first electrode. In this example, a first vertical interconnect access (via) is positioned on the exposed surface of the first electrode and a second via is positioned on an exposed surface of the second electrode. The TFC can be positioned in or on a layer of the package substrate close to a component (e.g., a die, a die stack, etc.) on the package substrate that may require a decoupling capacitance.

Anmelder

Firmen

Intel Corporation
INTEL Corporation

Land

🇺🇸 USA

Fachgebiete