Halbleiterbauelement

Details

Veröffentlichungs-Nr.

EP3739636

Aktenzeichen

EP19174732

Anmeldetag

15. Mai 2019

Veröffentlichung

19. April 2023

Erteilung

19. April 2023

Rechtsraum

EP

IPC

H01L29/78H01L29/06H01L29/40

Abstract

A semiconductor device is provided that comprises a semiconductor body having a first surface, a second surface opposing the first surface and side faces, an active area, wherein the active area comprises a plurality of active transistor cells and an edge termination region laterally surrounding the active area. Each active transistor cell comprises a columnar trench comprising a field plate and a mesa comprising a drift region of a first conductivity type. The edge termination region comprises a plurality of inactive cells, each inactive cell comprising a columnar termination trench comprising a field plate and a termination mesa comprising a drift region of a first conductivity type. The edge termination region comprises a transition region laterally surrounding the active region and an outer termination region laterally surrounding the transition region. In the transition region, the termination mesa comprises a body region of the second conductivity type that is arranged on the drift region. In the outer termination region, the drift region of the termination mesa extends to the first surface. The edge termination region further comprises a buried doped region that has a lateral extent such that it is positioned in the transition region and in the outer termination region.

Anmelder

Firma

Infineon Technologies Austria AG

Land

🇦🇹 Österreich

Fachgebiete