Lagenaufbau für eine Magnettunnelübergangsvorrichtung

Details

Veröffentlichungs-Nr.

EP3739640

Aktenzeichen

EP19174175

Anmeldetag

13. Mai 2019

Veröffentlichung

24. August 2022

Erteilung

24. August 2022

Rechtsraum

EP

IPC

H01L43/08H01L43/10H01L43/12

Abstract

In the present disclosure, there is provided a layer stack (108) for a magnetic tunnel junction, MTJ, device (100) comprising a seed layer structure (110), a pinning layer structure (120) arranged above the seed layer structure (110) and above the pinning layer structure a Fe-comprising reference layer structure (130) and a free layer structure (150) separated by a tunnel barrier layer (140) wherein the seed layer structure comprises a Ru-comprising layer (114) and a Cr-comprising layer (116), the Cr-comprising layer forming (116) an upper layer of the seed layer structure (110). There is also provided a method for forming a layer stack for a MTJ device.

Anmelder

Firma

IMEC vzw

Land

🇧🇪 Belgien

Fachgebiete