Halbleiterbauelement zur Infrarotdetektion, Verfahren zur Herstellung des Halbleiterbauelements zur Infrarotdetektion und Infrarotdetektor

Details

Veröffentlichungs-Nr.

EP3754730

Aktenzeichen

EP19180949

Anmeldetag

18. Juni 2019

Veröffentlichung

18. Januar 2023

Erteilung

18. Januar 2023

Rechtsraum

EP

IPC

H01L31/109H01L31/0232H01L31/028G02B6/12

Abstract

A semiconductor device for infrared detection comprises a stack of a first semiconductor layer (1), a second semiconductor layer (2) and an optical coupling layer (3). The first semiconductor layer (1) has a first type of conductivity and the second semiconductor layer (2) has a second type of conductivity. The optical coupling layer (3) comprises an optical coupler (31) and at least a first lateral absorber region (32). The optical coupler (31) is configured to deflect incident light towards the first lateral absorber region (32). The first lateral absorber region (32) comprises an absorber material with a bandgap Eg in the infrared, IR.

Anmelder

Firma

ams AG

Land

🇦🇹 Österreich

Fachgebiete