Amorphisierung und Nachwachsen von Source-Drain-Regionen von der Unterseite einer Halbleiteranordnung

Details

Veröffentlichungs-Nr.

EP3758047

Aktenzeichen

EP20165849

Anmeldetag

26. März 2020

Veröffentlichung

25. Februar 2026

Erteilung

25. Februar 2026

Rechtsraum

EP

IPC

H01L21/265H10D30/60H10D48/30

Abstract

A device is disclosed. The device includes a channel, a first source-drain region adjacent a first portion of the channel, the first source-drain region including a first crystalline portion that includes a first region of metastable dopants , a second source-drain region adjacent a second portion of the channel, the second source-drain region including a second crystalline portion that includes a second region of metastable dopants. A gate conductor is on the channel.

Anmelder

Firmen

Intel Corporation
INTEL Corporation

Land

🇺🇸 USA

Fachgebiete