Verfahren zur Formung einer Vergrabenen Metallleitung in einem Halbleitersubstrat

Details

Veröffentlichungs-Nr.

EP3770952

Aktenzeichen

EP19187988

Anmeldetag

24. Juli 2019

Veröffentlichung

14. Mai 2025

Erteilung

14. Mai 2025

Rechtsraum

EP

IPC

H01L21/74H01L23/528H01L23/535// H01L21/8234H01L21/8238

Abstract

A method for forming a buried metal line (110) in a semiconductor substrate (120) is disclosed. The method comprises forming, at a position between a pair of semiconductor structures (131, 132), a metal line trench (112) in the semiconductor substrate at a level below a base of each semiconductor structure of the pair, and forming the metal line in the metal line trench by means of area selective deposition of a metal line material (114), followed by embedding the pair of semiconductor structures in an insulating layer (140).

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien

Fachgebiete