Substratdurchkontaktierung und Verfahren zur Herstellung einer Substratdurchkontaktierung

Details

Veröffentlichungs-Nr.

EP3790046

Aktenzeichen

EP19195145

Anmeldetag

3. September 2019

Veröffentlichung

2. Juli 2025

Erteilung

2. Juli 2025

Rechtsraum

EP

IPC

H01L23/48

Abstract

An open through-substrate via (1), TSV, comprises an insulation layer (20) disposed adjacent to at least a portion of side walls (15) of a trench (14) and to a surface (13) of a substrate body (10). The TSV further comprises a metallization layer (30) disposed adjacent to at least a portion of the insulation layer (20) and to at least a portion of a bottom wall (16) of said trench (14), a redistribution layer (40) disposed adjacent to at least a portion of the metallization layer (30) and a portion of the insulation layer (20) disposed adjacent to the surface (13), and a capping layer (50) disposed adjacent to at least a portion of the metallization layer (30) and to at least a portion of the redistribution layer (40). The insulation layer (20) and/or the capping layer (50) comprise sublayers (21, 22, 51, 52) that are distinct from each other in terms of material properties. A first of the sublayers (21, 51) is disposed adjacent to at least a portion of the side walls (15) and to at least a portion of the surface (13) and a second of the sublayers (22, 52) is disposed adjacent to at least a portion of the surface (13).

Anmelder

Firmen

ams AG
AMS AG

Land

🇦🇹 Österreich

Fachgebiete