Verfahren zum Schneiden eines Halbleitersubstrats in eine Vielzahl von Plättchen

Details

Veröffentlichungs-Nr.

EP3799112

Aktenzeichen

EP19200554

Anmeldetag

30. September 2019

Veröffentlichung

21. Februar 2024

Erteilung

21. Februar 2024

Rechtsraum

EP

IPC

H01L21/78H01L21/56H01L23/00

Abstract

According to an aspect of the present inventive concept there is provided a method for dicing a semiconductor substrate (100) into a plurality of dies (170), wherein the semiconductor substrate having a front side (101) provided with a plurality of device areas (110), a back side (103), and a plurality of through substrate vias (130). The method comprises defining, from the front side (101) of the semiconductor substrate (100), at least one trench (140) to be formed between adjacent device areas (110a, 110b), forming the at least one trench (140), from the front side (101) of the semiconductor substrate (100), arranging a protective layer (150) on the front side (101) of the semiconductor substrate (100), thinning the semiconductor substrate (100) from the back side (103) to reduce the thickness (106) of the semiconductor substrate (100), processing the back side (103) of the semiconductor substrate 100 to form at least one contact (160), the contact (160) contacting at least one through substrate via (130), etching, from the back side (103) of the semiconductor substrate (100), through the minor portion (106b) of the thickness (106) of the semiconductor substrate (100) underneath the at least one trench (140), and dicing the semiconductor substrate (100) into the plurality of dies (170).

Anmelder

Firmen

IMEC VZW
Imec VZW

Land

🇧🇪 Belgien

Fachgebiete