Selbstausgerichtete Kontakte für Nanofolienfeldeffekttransistorvorrichtungen

Details

Veröffentlichungs-Nr.

EP3836196

Aktenzeichen

EP19215873

Anmeldetag

13. Dezember 2019

Veröffentlichung

26. April 2023

Erteilung

26. April 2023

Rechtsraum

EP

IPC

H01L21/74H01L21/768H01L21/8238H01L23/528H01L27/02H01L27/092H01L29/06H01L29/417H01L21/336H01L29/775// H01L29/423H01L29/786

Abstract

A method for forming a semiconductor device, comprising forming a first transistor structure and a second transistor structure separated by a trench. The first and the second transistor structures comprise a plurality of stacked nanosheets forming a channel structure, and a source portion and a drain portion horizontally separated by the channel structure. A first and a second spacer is formed in the trench at sidewalls of the second transistor structures, both protruding above a top surface of the transistor structures. The method comprises applying a first mask layer including an opening exposing the first spacer at a first source/drain portion of the first transistor structure and covering the second spacer, partially etching the exposed first spacer through the opening, exposing at least parts of a sidewall of the first source/drain portion of the first transistor structure, and removing the mask layer. The method further comprises depositing a contact material over the transistor structures and the first and second spacer, filling the trench and contacting the first source/drain portion of the first transistor structure, and etching back the contact material layer below a top surface of the second spacer.

Anmelder

Firma

Imec VZW

Land

🇧🇪 Belgien

Fachgebiete