Halbleitergehäuse mit Umverteilungsschichtstruktur auf einer Substratkomponente

Details

Veröffentlichungs-Nr.

EP3848962

Aktenzeichen

EP20213349

Anmeldetag

11. Dezember 2020

Veröffentlichung

4. Juni 2025

Erteilung

4. Juni 2025

Rechtsraum

EP

IPC

H01L23/498H01L23/538

Abstract

A semiconductor package (40) includes a substrate component (100) having a first surface (Si), a second surface (S<2>) opposite to the first surface (S<1>), and a sidewall surface (SW) extending between the first surface (Si) and the second surface (S<2>); a re-distribution layer, RDL, structure (130) disposed on the first surface (Si) and electrically connected to the first surface (Si) through first connecting elements (112) comprising solder bumps or balls; a plurality of ball grid array, BGA, balls (110) mounted on the second surface (S<2>) of the substrate component (100); and at least one integrated circuit die (300) mounted on the RDL structure (130) through second connecting elements (310).

Anmelder

Firma

MEDIATEK INC.

Land

🇹🇼 Taiwan

Fachgebiete