Verfahren zum Ätzen im Nanometerbereich einer Germanium-Zinn-Legierung (gesn) für Fet-Transistor

Details

Veröffentlichungs-Nr.

EP3859769

Aktenzeichen

EP21153243

Anmeldetag

25. Januar 2021

Veröffentlichung

26. Juni 2024

Erteilung

26. Juni 2024

Rechtsraum

EP

IPC

H01L21/3065H01L29/78H01L29/06B82Y10/00H01L29/161H01L29/66H01L29/739H01L29/775H01L29/786

Abstract

The invention relates to a method for etching at the nanometric scale a layer of Ge<1-x>Sn<x> on a support for a FET transistor, x being the tin concentration in the GeSn alloy, said etching method comprising: - a step of plasma etching of said layer of Ge<1-x>Sn<x> with a mixture comprising dichlorine (Cl<2>), and dinitrogen (N<2>) and under an etching pressure less than or equal to 50 mTorr, preferably less than or equal to 10 mTorr. The invention also relates to a method of manufacturing a conduction channel on a support for a FET transistor, comprising a step of forming a layer of Ge<1-x>Sn<x> on said support, said layer being produced by epitaxial growth, and a step of etching the layer of Ge<1-x>Sn<x> according to the etching method. The invention also relates to a Ge<1-x>Sn<x> conduction channel for a FET transistor, the channel being obtained according to the manufacturing method, and to a FET transistor comprising a plurality of Ge<1-x>Sn<x> conduction channels.

Anmelder

Firmen

Commissariat à l'Energie Atomique et aux Energies Alternatives
Centre national de la recherche scientifique

Land

🇫🇷 Frankreich

Fachgebiete