Halbleiterbauelement

EP3901990 Art B1 18. Juni 2025

Anmelder: Renesas Electronics Corporation 🇯🇵

Details

Veröffentlichungs-Nr.: EP3901990
Aktenzeichen: EP21169443
Anmeldetag: 20. April 2021
Veröffentlichung: 18. Juni 2025
Erteilung: 18. Juni 2025
Rechtsraum: EP
IPC: H01L21/288H01L23/00H01L25/07H01L25/18H10D30/66H10D84/00

Abstract

The semiconductor device (1) includes a first electrode (MSF), a second electrode (MSS) electrically coupled to the first electrode, and a third electrodes (ESE1, ESE2) electrically coupled to at least one of the first and the second electrode, a first plating deposition portion on the first electrode, a second and a third plating deposition portions formed on the second and the third electrode, respectively. The areas of the second and the third plating deposition portion are smaller than the area of the first plating deposition portion. The periphery length of the third plating deposition portion is longer than the periphery length of the second plating deposition portion.

Anmelder

Firma: Renesas Electronics Corporation
Land: 🇯🇵 Japan

🇯🇵 Renesas Electronics

Japanischer Halbleiterhersteller mit Sitz in Tokio, spezialisiert auf Mikrocontroller, analoge Bauelemente und Halbleiterlösungen unter anderem für die Automobil- und Industrieelektronik.

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Halbleiter & Elektrische Bauelemente

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