Verfahren zum Schneiden eines Halbleiterbauelements und Halbleiterbauelement

Details

Veröffentlichungs-Nr.

EP3913660

Aktenzeichen

EP21174712

Anmeldetag

19. Mai 2021

Veröffentlichung

19. Juni 2024

Erteilung

19. Juni 2024

Rechtsraum

EP

IPC

H01L21/78

Abstract

A method of manufacturing a semiconductor element includes a first irradiation step in which a laser beam is irradiated to form, in the interior of the substrate, a plurality of first modified portions aligned along a first direction; a second irradiation step in which a laser beam is irradiated to form a plurality of second modified portions aligned along the first direction at a position adjacent to the plurality of first modified portions in the second direction; and a third irradiation step which a laser beam is irradiated to form a plurality of third modified portions aligned along the first direction at a position closer to the first surface than the first modified portions and overlapping the plurality of first modified portions in a thickness direction of the substrate.

Anmelder

Firma

Nichia Corporation

Land

🇯🇵 Japan

Fachgebiete