Transistorstrukturen für Doppelseitige Integrierte Schaltungen mit Leeren Unteren Kanalbereichen

Details

Veröffentlichungs-Nr.

EP3926668

Aktenzeichen

EP20214824

Anmeldetag

17. Dezember 2020

Veröffentlichung

5. März 2025

Erteilung

5. März 2025

Rechtsraum

EP

IPC

H01L21/8234H01L21/768H01L23/528H01L29/786H01L29/423H01L29/06H01L21/8238B82Y10/00H01L27/088H01L27/092H01L29/775H10B10/00

Abstract

Integrated circuitry comprising interconnect metallization on both front and back sides of a gate-all-around (GAA) transistor structure lacking at least one active bottom channel region. Bottom channel regions may be depopulated from a GAA transistor structure following removal of a back side substrate that exposes an inactive portion of a semiconductor fin. During back-side processing, one or more bottom channel region may be removed or rendered inactive through dopant implantation. Back-side processing may then proceed with the interconnection of one or more terminal of the GAA transistor structures through one or more levels of back-side interconnect metallization.

Anmelder

Firma

INTEL Corporation

Land

🇺🇸 USA

Fachgebiete