Magnetoresistive Speichervorrichtung

Details

Veröffentlichungs-Nr.

EP3944325

Aktenzeichen

EP20315358

Anmeldetag

23. Juli 2020

Veröffentlichung

13. November 2024

Erteilung

13. November 2024

Rechtsraum

EP

IPC

H10B61/00H10N50/10H10N50/80H10N50/85G11C11/16

Abstract

The invention concerns a memory device comprising a substrate defining a main plane; a plurality of memory cells each comprising a SOT current layer (3) disposed in the main plane of the substrate and a magnetic tunnel junction (2) residing on the SOT current layer (3); and a bit line and a source line to flow a write current in a write path including the SOT current layer (3) of a selected memory cell. The source line comprises a conductive magnetic material providing a magnetic bias field extending to the magnetic tunnel junction (2) of the selected memory cell for assisting the switching of the cell state when the write current is flowing.

Anmelder

Firmen

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
Centre National de la Recherche Scientifique
Antaios

Land

🇫🇷 Frankreich

Fachgebiete