Verfahren zur Bestimmung von Zielwiderstandswerten für eine Resistive Speicherzelle und Zugehörige Speichervorrichtung

Details

Veröffentlichungs-Nr.

EP3958266

Aktenzeichen

EP20305941

Anmeldetag

21. August 2020

Veröffentlichung

13. August 2025

Erteilung

13. August 2025

Rechtsraum

EP

IPC

G11C13/00G11C11/56G11C29/02

Abstract

An aspect of the invention relates to a method for determining target resistance levels for a resistive memory cell. During the method at least one second target resistance level (R<3>) based on a first target resistance level (R<4>), and on a first resistance dispersion value (σ<Δ>,R<4>) representative of the dispersion of a first set of final resistance values obtained, after relaxing of the memory cell, for initial values of the resistance of the memory cell distributed over a first given initialisation interval (I<4>) having a predetermined width (Δ<4>), are determined. Another aspect of the invention relates to a memory device comprising memory cells and an electronic control device configured to control the memory cells at target resistance levels determined in accordance with said method.

Anmelder

Firmen

Commissariat à l'Energie Atomique et aux Energies Alternatives
Weebit Nano Ltd

Land

🇫🇷 Frankreich

Fachgebiete